The Energy Research Institute @ NTU (ERI@N) invites applications for the position of Research Fellow.
Key Responsibilities:
To conduct research on the development of GaN-based materials growth and device processing.
Develop regrowth fabrication process using highly doped GaN structure to reduce the Ohmic contact resistance, preferably having worked in clean room process environment
Support in the growth of GaN epistructures using MBE/MOCVD growth process technology.
Electrical, structural, surface and optical characterization of III-Nitride semiconductor epiwafers
Thorough analysis of the results and publish in high impact factor scientific journals.
Independent handling of the project to meet the deliverables timely.
Writing project proposal and technical reports to the funding agencies.
Support PhD students and junior research staff in their research projects.
Job Requirements:
PhD in Physics, Materials Science, Electrical and Electronic Engineering or related field
Hands-on experience with III-Nitride semiconductor heterostructure growth and characterization, and preferably device processing in cleanroom and characterization tools.
Self-driven and motivated person who is a good team player.
Ability to adapt to changing priorities
Fluent in English and competent in technical writing skills.
We regret that only shortlisted candidates will be notified.